Semiconductor integrated circuit device including a DRAM in whic

Details Semiconductor integrated circuit device including a DRAM in whic Semiconductor integrated circuit device including a DRAM in whic

1996-07-22

1998-03-24

Nelms, David C.

Static information storage and retrieval

Format or disposition of elements

257296, 257300, G11C 502

Patent

active

057320098

ABSTRACT:
A DRAM has memory cells provided at crossing points between word line conductors and bit line conductors. Each memory cell has a cell selection transistor and an information storage capacitor arranged over the bit line conductors. Unit active regions are defined in a main surface of a semiconductor substrate by a field isolation pattern. The field isolation pattern has a controlled length of extension of bird's beaks so that channel formation regions in each unit active region has almost no stepped portion to provide the cell selection transistors with a stabilized threshold voltage.

REFERENCES:
patent: 4970564 (1990-11-01), Kimura et al.
patent: 5428239 (1995-06-01), Okumura et al.
patent: 5539231 (1996-07-01), Suganaga et al.
patent: 5578849 (1996-11-01), Tadaki et al.
patent: 5610418 (1997-03-01), Eimori

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