Semiconductor integrated circuit device having wiring structure

Details Semiconductor integrated circuit device having wiring structure Semiconductor integrated circuit device having wiring structure

1995-12-22

1998-10-06

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257758, 257763, H01L 2348, H01L 2352, H01L 2940

Patent

active

058181091

ABSTRACT:
A wiring structure incorporated is formed on an insulating layer, and includes an aluminum-based metal strip extending on the insulating layer and a barrier layer of refractory metal covering the aluminum-based metal strip so as to prevent the aluminum-based metal layer from electro-migration; the two-level barrier layer has fin portions extending on both sides of the aluminum-based metal layer therealong, and the fin portions prevent the wiring structure from increase of contact resistance due to a mis-alignment.

REFERENCES:
"Electromigration in Aluminum Film Stripes Coated with Anodic Aluminum Oxide Films"; Satake et al: Japanese Journal of Applied Physics; vol. 12, No. 4; Apr. 1973; pp. 518-522.

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