Semiconductor integrated circuit device having substrate potenti

Details Semiconductor integrated circuit device having substrate potenti Semiconductor integrated circuit device having substrate potenti

1992-01-28

1993-03-02

Sikes, William L.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307355, 307362, 307364, H03K 301, H03K 522

Patent

active

051912350

ABSTRACT:
A node potential V1 which is obtained by the division of an internal reference potential and a substrate potential and another node potential V2 which is obtained by the division of the internal reference potential and the ground potential are compared with each other by a current-mirror amplifier. The initial setting of the above two node potentials (V1 and V2) is made as V1>V2. When the substrate potential becomes large in its absolute value, the node potential V1 falls following such change and, when it reaches a predetermined substrate potential, the potentials result in V1<V2. Then, a true output node of the current-mirror amplifier outputs an output of a largely inverted output level which is further amplified by at least one inverter. The semiconductor integrated circuit device is capable of detecting the predetermined substrate potential even if there exist variations in the threshold values in MOS transistors concerned in the fabricating process.

REFERENCES:
patent: 4471290 (1984-09-01), Yamaguchi
patent: 4742250 (1988-05-01), Tobita
patent: 4780625 (1988-10-01), Zobel
patent: 5043599 (1991-08-01), Zitta
Patent Abstract of JP-A-63 224 665.
Patent Abstract of JP-A-59 122 225.

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