Semiconductor integrated circuit device having semi-insulator su

Details Semiconductor integrated circuit device having semi-insulator su Semiconductor integrated circuit device having semi-insulator su

1986-06-20

1989-02-07

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 2313, 357 22, 307200B, 361 56, 361 91, H01L 2990, H01L 2978

Patent

active

048035270

ABSTRACT:
Disclosed is a semiconductor integrated circuit device forming MESFETs by use of a semi-insulator GaAs substrate which prevents destruction of an electrostatic destruction protect circuit and a Schottky junction of an internal circuit by causing a part of electrostatic energy, which is applied to external terminals, to flow from a semiconductor region connected to the external terminals into another semiconductor region which is formed in the vicinity of the semiconductor region described above and to which a predetermined fixed potential is applied.

REFERENCES:
patent: 4258311 (1981-03-01), Tokuda et al.
patent: 4356502 (1982-10-01), Yamada
patent: 4396437 (1983-08-01), Kwok et al.
patent: 4683443 (1987-07-01), Young et al.
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 1984 Phila. PA"A CMOS . . . DIFIDW" Lin et al. pp. 202-209.
Eden, "Capacitor . . . D-MESFET IC's" GaAs Symposium Oct. 84 pp. 11-14.

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