Semiconductor integrated circuit device having logic circuit...

Static information storage and retrieval – Powering – Conservation of power

Reexamination Certificate

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C365S229000, C365S228000, C365S208000, C365S207000

Reexamination Certificate

active

07102954

ABSTRACT:
In a memory circuit, a transistor formed in the same process as that of a logic transistor is used for peripheral circuitry except for a region to be supplied with high voltage. Thus, the manufacturing process can be simplified and a logic-merged memory operating at a high speed is provided.

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patent: 11-238860 (1999-08-01), None
“A 5.3-GB/s Embedded SDRAM Core with Slight-Boost Scheme”, A. Yamazaki et al., IEEE Journal of Solid-State Circuits, vol. 34, No. 5, May 1999, pp. 661-667.

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