Semiconductor integrated circuit device having internal step-dow

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3652335, 36523006, 327545, G11C 1140

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active

054306825

ABSTRACT:
A word line driver incorporated in a semiconductor memory device is powered by an internal step-down voltage generator for energizing a selected word line, and an address transition detecting circuit causes an n-channel enhancement type switching transistor to temporally turn on between the address transition and completion of a charging operation on the selected word line, thereby preventing the internal step-down power voltage from undesirable decay.

REFERENCES:
patent: 4585955 (1986-04-01), Uchida
patent: 5023476 (1991-06-01), Watanabe et al.
Masashi Horiguchi et al., "A Tunable CMOS-DRAM Voltage Limiter with Stabilized Feedback Amplifier", IEEE Journal of Solid-State Circuits, vol. 25, No. 5, Oct. 1990, pp. 1129-1133.

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