Semiconductor integrated circuit device having improvement arran

Details Semiconductor integrated circuit device having improvement arran Semiconductor integrated circuit device having improvement arran

1994-08-18

1996-12-24

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257296, 257784, H01L 2348, H01L 2352

Patent

active

055876072

ABSTRACT:
A DRAM includes a package, a semiconductor chip housed in the package, and a plurality of leads each disposed from the outside of the package over the periphery of the semiconductor chip. The power supply potential is applied to some of the leads. Corresponding to one power supply lead, one power supply pad and one selection pad are formed. Corresponding to another power supply lead, another power supply pad and another selection pad are formed. Each of these two selection pads is connected or not connected to the corresponding power supply lead by bonding. As a result, one of four word configurations is selected. Since these two selection pads are disposed in the vicinity of the corresponding power supply leads, respectively, the number of times of bonding to one power supply lead is reduced.

REFERENCES:
patent: 4956811 (1990-09-01), Kajigaya et al.
patent: 5208782 (1993-05-01), Sakuta et al.
patent: 5252854 (1993-10-01), Arita et al.
patent: 5332922 (1994-07-01), Oguchi et al.
patent: 5381036 (1995-01-01), Bigler et al.
Articles of Spring Seminar, Institute of Electronics, Information and Communication Engineers of Japan, 1993, vol. 5, pp. 5-267.

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