Semiconductor integrated circuit device having improved trench i

Details Semiconductor integrated circuit device having improved trench i Semiconductor integrated circuit device having improved trench i

1990-12-28

1992-12-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257647, 257649, H01L 2712

Patent

active

051683431

ABSTRACT:
In a dielectric isolation structure for elements in a semiconductor integrated circuit device, thermal stress and the resistance to hydrofluoric acid have been improved by using silicon boron nitride, silicon oxynitride or silicon nitride as an insulator material in the manner embedded in grooves or trenches formed on a surface of a substrate of the device. Additional merit of reducing parasitic capacitance of the dielectric isolation structure can be obtained by introducing therein a composite layer comprising a layer of porous silicon oxide and a layer of the insulator material as above.

REFERENCES:
patent: 4549338 (1985-10-01), Abend et al.
patent: 4621414 (1986-11-01), Iranmanesh
patent: 4727048 (1988-02-01), Pierce et al.
patent: 4791073 (1988-12-01), Nagy et al.
patent: 4825277 (1989-04-01), Mattox et al.
patent: 4855804 (1989-08-01), Bergami et al.

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