Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1990-12-05
1993-06-01
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257518, 257754, 257763, 257768, 341159, H01L 2782, H01L 2900, H01L 2348, H01L 2352
Patent
active
052162761
ABSTRACT:
A semiconductor integrated circuit device includes at least two bipolar transistors having a first type structure in which a wiring layer is formed in direct contact with the emitter region thereof and at least one bipolar transistor having a second type structure in which a polysilicon layer is formed on the emitter region thereof. The transistor having the first type structure is used in a circuit which is required to have a high matching degree. The transistor having the second type structure is used in a circuit which is required to have a high performance, low power consumption and high integration density rather than a high matching degree.
REFERENCES:
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patent: 3981072 (1976-09-01), Buie
patent: 4110782 (1978-08-01), Nelson et al.
patent: 4360823 (1982-11-01), van Gils
patent: 4826780 (1989-05-01), Takemoto et al.
patent: 4939518 (1990-07-01), Hotta et al.
patent: 4946798 (1990-08-01), Kawakatsu
patent: 4980738 (1990-12-01), Welch et al.
Hille Rolf
Kabushiki Kaisha Toshiba
Loke Steven
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