Semiconductor integrated circuit device having high breakdown-vo

Details Semiconductor integrated circuit device having high breakdown-vo Semiconductor integrated circuit device having high breakdown-vo

1991-02-05

1992-04-28

Prenty, Mark

357 52, 357 51, 357 47, 357 55, H01L 2940, H01L 2934, H01L 2702, H01L 2906

Patent

active

051092662

ABSTRACT:
A semiconductor integrated circuit device according to the present invention has a field plate disposed between the element isolation region which surrounds a semiconductor active element and an electrode wiring which is disposed to traverse the element isolation region while being electrically connected with the semiconductor active element, and a predetermined voltage is applied to the field plate. Accordingly, a concentration of the electric field is relieved not only at the boundary region between the element isolating region and the surface of the semiconductor active element which the electrode wiring traverses, but also at the surface of the semiconductor active element under the edge of the field plate, which eventually makes it possible to raise the breakdown-voltage of the semiconductor integrated circuit device.

REFERENCES:
patent: 4292642 (1981-09-01), Appels et al.
patent: 4868819 (1989-09-01), Kimura
Adler et al., "The Evolution of Power Device Technology", IEEE Transaction on Electron Devices, vol. ED-31, No. 11 (Nov. 1984), pp. 1570-1591.
R. Gallagher, "Linear IC Technology Can Withstand Over 400 Volts", Electronics International (Mar. 22, 1984), pp. 73-74.

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