Patent
1991-02-22
1991-10-22
Carroll, J.
357 40, 357 42, H01L 2702
Patent
active
050600460
ABSTRACT:
In a semiconductor integrated circuit device of master slice scheme having an internal circuit region and peripheral circuits which surround the internal circuit region, the internal circuit region including wiring channel regions and basic cell arrays in each of which a plurality of basic cells are arranged in a matrix shape. Special basic cells constructed of transistors which are larger in size than transistors constituting the basic cells are disposed at the end parts of each of the basic cell arrays, and a circuit of high driving power is manufactured using one or more of the special basic cells. In addition, those parts of an insulator film on the special basic cells which extend beyond the width lines of the basic cell array are used for the wiring channel regions. Thus, the utilization factor of the basic cells can be enhanced more than in a case where the circuit of high driving power is formed by connecting some of the basic cells in parallel, and the circuit of high driving power can be formed without lowering the utilization factor of the wiring channel regions.
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Carroll J.
Hitachi , Ltd.
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