Semiconductor integrated circuit device having diode and bipolar

Details Semiconductor integrated circuit device having diode and bipolar Semiconductor integrated circuit device having diode and bipolar

1993-05-17

1994-06-21

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 38, 257588, 257751, 257756, H01L 2940, H01L 2972

Patent

active

053230213

ABSTRACT:
A bipolar transistor and a diode are incorporated in a semiconductor integrated circuit device, and an emitter electrode is constituted by lower and upper doped polysilicon films sandwiching an oxygen-leakage film which tunnels minority carriers of the base therethrough at higher probability than the majority carriers so as to enhance the emitter injection efficiency, thereby allowing a designer to increase the base width and the distance from the p-n junction between the anode and the cathode for improving the breakdown voltage of the diode without sacrifice of the current amplification factor.

REFERENCES:
patent: 4672413 (1987-06-01), Gardner
patent: 5028973 (1991-07-01), Bajor
patent: 5272357 (1993-12-01), Morishita
de Graaff et al., The SIS Tunnel Emitter: A Theory for Emitters with Thin Interfacial Layers, IEEE Trans. on Electron Devices, vol. Ed-26, No. 11, Nov. 1979, pp. 1771-1776.

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