Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Patent
1991-01-28
1993-01-05
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
257566, 257577, 257578, 257586, H01L 2948, H01L 2972
Patent
active
051775840
ABSTRACT:
A bipolar SRAM which includes a forward bipolar transistor and a reverse bipolar transistor on an identical semiconductor substrate, is disclosed. Concretely, the base region of the reverse bipolar transistor is formed at a deeper position of the substrate than the base region of the forward bipolar transistor, thereby to heighten the cutoff frequency f.sub.T of the reverse bipolar transistor.
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Nakazato Kazuo
Ogiue Katsumi
Onai Takahiro
Uchida Akihisa
Yatsuda Yuji
Carroll J.
Hitachi , Ltd.
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