Semiconductor integrated circuit device having bipolar memory, a

Details Semiconductor integrated circuit device having bipolar memory, a Semiconductor integrated circuit device having bipolar memory, a

1991-01-28

1993-01-05

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

257566, 257577, 257578, 257586, H01L 2948, H01L 2972

Patent

active

051775840

ABSTRACT:
A bipolar SRAM which includes a forward bipolar transistor and a reverse bipolar transistor on an identical semiconductor substrate, is disclosed. Concretely, the base region of the reverse bipolar transistor is formed at a deeper position of the substrate than the base region of the forward bipolar transistor, thereby to heighten the cutoff frequency f.sub.T of the reverse bipolar transistor.

REFERENCES:
patent: 4357622 (1982-11-01), Maglo et al.
patent: 4388636 (1983-12-01), Lohstroh
patent: 4433470 (1984-02-01), Kamegawa et al.
patent: 4535531 (1985-09-01), Bheko et al.
patent: 4617724 (1986-10-01), Yokoyama et al.
patent: 4694321 (1987-09-01), Woshio et al.
patent: 4815037 (1989-03-01), Toyoda et al.
patent: 4858184 (1989-09-01), Homma et al.
patent: 4949145 (1990-09-01), Yano et al.
patent: 4949162 (1990-09-01), Tamaki et al.

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