Semiconductor integrated circuit device having an electrode pad

Details Semiconductor integrated circuit device having an electrode pad Semiconductor integrated circuit device having an electrode pad

1993-03-23

1995-10-31

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257758, 257779, 257774, 257784, H01L 2350

Patent

active

054632552

ABSTRACT:
Disclosed is a semiconductor integrated circuit device with an electrode pad having a lower conductive film (second aluminum film) formed on a semiconductor substrate, an upper conductive film (third aluminum film) formed through an interlayer insulating film (second interlayer insulating film) on the lower conductive film. The upper conductive film is electrically connected to the lower conductive film by a minute through hole, and extends to a planar region where the lower conductive film is not present. That extending portion of the upper conductive film serves as a wire bonding portion. This design allows the through hole to be formed as small as the inner through hole of the integrated circuit, so that this electrode pad will have an improved bonding characteristic while being able to cope with a through-hole filling step.

REFERENCES:
patent: 4185294 (1980-01-01), Sumitomo et al.
patent: 5075753 (1991-12-01), Kozono
patent: 5294837 (1994-03-01), Takase et al.

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