Semiconductor integrated circuit device having a Schottky barrie

Details Semiconductor integrated circuit device having a Schottky barrie Semiconductor integrated circuit device having a Schottky barrie

1981-02-17

1982-02-16

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 48, 357 92, 307304, H01L 2948, H01L 2956, H01L 2964

Patent

active

043162029

ABSTRACT:
An integrated Schottky barrier diode having a low forward voltage is disclosed. It has been discovered that, contrary to previous theory, the mathematical relationships between the contact area of a Schottky barrier diode and the series resistance thereof and between the contact area and the forward current at zero forward voltage are non-linear for sufficiently small contact areas. According to the present invention, a Schottky barrier diode comprises several smaller Schottky barrier diodes connected in parallel and sharing a common cathode, the Schottky barrier contact area of each of the component diodes being sufficiently small to fall within the range in which barrier contact area is non-linearly related to at least one of series resistance and forward current at zero forward voltage. A Schottky barrier diode formed of several smaller diodes in this manner has a lower forward voltage than an SBD that has the same total barrier contact area but that is not split up into several component diodes.

REFERENCES:
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patent: 3660822 (1972-05-01), Davidson
patent: 3719797 (1973-03-01), Andrews et al.
patent: 3770606 (1973-11-01), Lepselter
patent: 3780320 (1973-12-01), Dorier et al.
patent: 3995301 (1976-11-01), Magdo
patent: 4035664 (1977-07-01), Berger et al.
patent: 4070654 (1978-01-01), Tachi
patent: 4159915 (1979-07-01), Anantha et al.
patent: 4183036 (1980-01-01), Muller
patent: 4199775 (1980-04-01), Agraz-Guerena

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