Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-08-12
1998-07-14
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
438467, H01L 2900
Patent
active
057809186
ABSTRACT:
An input part of a semiconductor integrated circuit includes a fuse element formed from a metal wiring layer and connected between an input pad and a source line is formed from wiring material. The wiring material is aluminum, possibly doped with silicon. The fuse element is narrowed or thinned at a location remote from an internal circuit. The stability and certainty of the melting properties of the fuse element at the narrowed of thinned location is improved even when the device is sealed with resin, without interfering with the manufacturing process, and at the same time the desired fuse element properties are retained. Consequently, the operating characteristics of the internal circuit can be adjusted highly precisely and with certainty after the assembly of the integrated circuit into a package.
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Carroll J.
Seiko Epson Corporation
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