Semiconductor integrated circuit device having a leakage current

Details Semiconductor integrated circuit device having a leakage current Semiconductor integrated circuit device having a leakage current

1997-01-23

1997-12-30

Clawson, Jr., Joseph E.

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365168, 36518909, 36518911, 36523006, G11C 700

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057038252

ABSTRACT:
A circuit and method for reducing the leakage current drawn by a transistor when it is inactive. In a first implementation, a circuit selectively drives the gate of a transistor to a voltage level above a source voltage. As a result, the gate-source voltage is reversed and the leakage current flowing through the transistor is substantially reduced. In a second implementation, a circuit selectively biases the well of a transistor to a voltage level above a normal bias voltage. As a result, the voltage-current characteristics of the transistor are modified so that the leakage current is substantially eliminated.

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patent: 5463588 (1995-10-01), Chonan
patent: 5490117 (1996-02-01), Oda et al.
patent: 5521527 (1996-05-01), Sakata et al.
patent: 5541885 (1996-07-01), Takashima

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