Semiconductor integrated circuit device having a gate array with

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 236, 357 41, 357 54, 365 63, H01L 2710

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active

051032821

ABSTRACT:
In a gate array with a RAM, by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array are disposed so as to extend above the RAM. In order to minimize mutual interference, signal lines formed from a layer which is adjacent to the by-pass signal lines are disposed so as to intersect the latter at right angles. In addition, interconnection pitches in different layers which extend parallel with each other are set so that noises are cancelled in differential sense circuits.

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