Semiconductor integrated circuit device having a decoupling...

Details Semiconductor integrated circuit device having a decoupling... Semiconductor integrated circuit device having a decoupling...

2011-07-05

2011-07-05

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C438S210000, C438S329000

Reexamination Certificate

active

07973383

ABSTRACT:
The bottom side of an N type silicon substrate is connected to a power supply terminal, a second P type epitaxial layer is formed on all sides of the N type silicon substrate, and a device forming portion is provided on the second P type epitaxial layer. A first P type epitaxial layer and an interlayer insulating film are provided on the device forming portion and an N well and a P well are formed on the top surface of the first P type epitaxial layer. The second P type epitaxial layer is connected to a ground terminal via the first P type epitaxial layer, the P well, a p+diffusion region, a via and a wire. Accordingly, a pn junction is formed at the interface between the second P type epitaxial layer and the N type silicon substrate.

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