Semiconductor integrated circuit device having a carrier trappin

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 236, 357 55, 365149, H01L 2702, H01L 2978, H01L 2906, G11C 1124

Patent

active

047528192

ABSTRACT:
Herein disclosed is a DRAM which has such a carrier trapping region around a memory cell array as can trap minority carriers deep in a semiconductor substrate so that the minority carriers to be generated in the semiconductor substrate by alpha rays may be sufficiently trapped. The memory cell of the DRAM has a capacitor which is partially formed of the semiconductor substrate. The carrier trapping region is formed by making use of trenches or a well region.

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