Semiconductor integrated circuit device formed with a CMOS circu

Details Semiconductor integrated circuit device formed with a CMOS circu Semiconductor integrated circuit device formed with a CMOS circu

1985-03-15

1987-11-17

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307482, 307579, 307585, 307443, 307452, 307446, 365203, H03K 458, H03K 3013, H03K 3353, H03K 1710

Patent

active

047076259

ABSTRACT:
A circuit is formed with a combination of a CMOS circuit and a bootstrap capacitor connected to an output terminal of the CMOS circuit in order to reduce the power consumption and to obtain, at the output terminal, a high output voltage exceeding a power supply voltage. In order to prevent the discharge of the bootstrap capacitor, a switching element for preventing a reverse biasing state of the MOSFET on the power supply side of the CMOS circuit is connected in series with the MOSFET.

REFERENCES:
patent: 4387308 (1983-06-01), Nagami
patent: 4468576 (1984-08-01), Takemae
patent: 4482825 (1984-11-01), Nozaki et al.
patent: 4584491 (1986-04-01), Ulmer

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