Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Patent
1991-08-01
1994-01-11
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
257206, 257370, 257378, 257379, H01L 2702, H01L 2710
Patent
active
052784363
ABSTRACT:
Disclosed is an improved Bi-CMOS gate array for increasing integration density. The gate array includes a predetermined region for forming PMOS transistors, a predetermined region for forming bipolar transistors, a predetermined region for forming resistance elements, and a predetermined region for forming NMOS transistors. The resistance element region is formed adjacent to the bipolar transistor region, and, therefore, it is not necessary to provide any interconnection for forming a logic circuit including the resistance element connected to the bipolar transistor. An area occupied by interconnections on the semiconductor substrate is thus reduced, and, therefore the integration density is increased.
REFERENCES:
patent: 4958213 (1990-09-01), Eklund et al.
patent: 5066996 (1991-11-01), Hara et al.
Hanibuchi et al, "A Bipolar-PMOS Merged Basic Cell for 0.8.mu.m BiCMOS Sea-of-Gates", IEEE 1990 Custom Integrated Circuits Conference, pp. 4.2.1-4.2.4 .
Asahina Katsushi
Ueda Masahiro
Carroll J.
Mitsubishi Denki & Kabushiki Kaisha
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