Semiconductor integrated circuit device for connecting semicondu

Details Semiconductor integrated circuit device for connecting semicondu Semiconductor integrated circuit device for connecting semicondu

1996-11-12

2000-02-29

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257755, 257763, 257768, 257770, H01L 2348

Patent

active

060312882

ABSTRACT:
A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.

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