Semiconductor integrated circuit device employing interlayer ins

Details Semiconductor integrated circuit device employing interlayer ins Semiconductor integrated circuit device employing interlayer ins

1998-02-18

1999-09-07

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

528 31, 252 623R, 252 623Q, H01L 2329

Patent

active

059491302

ABSTRACT:
A plurality of lines are formed on the principal face of a substrate. An insulating film is formed on the principal surface of this substrate so as to cover the lines. This insulating film consists of a material which contains a low-dielectric constant composition having caged molecular structural units. Spaces of thin electron clouds delineate the centers of the caged molecular structural units. The dielectric constant is accordingly lower than that of denser materials.

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patent: 5486564 (1996-01-01), Mine et al.
patent: 5516858 (1996-05-01), Morita et al.
patent: 5776235 (1998-07-01), Camilletti et al.
patent: 5866197 (1999-02-01), Bremmer et al.

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