Semiconductor integrated circuit device employing a polycrystall

Details Semiconductor integrated circuit device employing a polycrystall Semiconductor integrated circuit device employing a polycrystall

1978-02-02

1979-07-31

Wojciechowicz, Edward J.

357 59, 357 71, H01L 2348

Patent

active

041632460

ABSTRACT:
In a semiconductor integrated circuit, an insulating film is formed on a major surface of the substrate. An elongated wiring layer including a polycrystalline silicon layer is formed on the insulating layer. At least one metallic area is formed over the wiring layer except at the ends of the wiring layer.

REFERENCES:
patent: 3667008 (1972-05-01), Katnack
patent: 3964092 (1976-06-01), Wadham

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