Semiconductor integrated circuit device double isolated CMOS inp

Details Semiconductor integrated circuit device double isolated CMOS inp Semiconductor integrated circuit device double isolated CMOS inp

1988-05-27

1990-02-20

Larkins, William D.

357 42, 357 43, 357 51, H01L 2704

Patent

active

049030930

ABSTRACT:
In a semiconductor integrated circuit device, input protective elements have current limiting resistors which are diffused resistors of a second conductivity type formed in a first semiconductor region of a first conductivity type isolated electrically by a second semiconductor region of the second conductivity type, with the first conductivity type semiconductor region being in a floating state electrically. The input protective elements create less leak current and have high electrostatic durability.

REFERENCES:
patent: 3712995 (1973-01-01), Steudel
patent: 4044373 (1977-08-01), Nomiya et al.
patent: 4554729 (1985-11-01), Tanimura et al.
Watanabe et al., IEEE International Electron Device Meeting, Technical Digest, Dec. 1, 1985, pp. 423-426.

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