Static information storage and retrieval – Read only systems – Semiconductive
Patent
1978-03-31
1980-01-08
Hecker, Stuart N.
Static information storage and retrieval
Read only systems
Semiconductive
307205, 365182, G11C 1700, G11C 1140, H03K 1908
Patent
active
041830938
ABSTRACT:
In a semiconductor integrated circuit device composed of insulated gate field-effect transistors, the improvement comprises the fact that insulated gate field-effect transistors having gate insulating films of substantially equal thicknesses are arranged on a principal surface of a semiconductor substrate in the shape of a matrix. Gate input columns of the transistors are formed of polycrystalline silicon layers, and some of the transistors are enhancement type, while others are depletion type. Further, the respective transistors are formed by the self-alignment technique which employs the polycrystalline silicon layers as a diffusion mask, and the depletion type transistors are formed by implanting impurity ions opposite in the conductivity type to the substrate into selected areas of the surface of the substrate. Thus, a read only memory in a MOS-IC chip has its occupying area reduced remarkably.
REFERENCES:
patent: 3825888 (1974-07-01), Kawagoe
patent: 3865651 (1975-02-01), Arita
patent: 3974366 (1976-08-01), Hebenstreit
patent: 3999081 (1976-12-01), Nakajima
Hecker Stuart N.
Hitachi , Ltd.
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