Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays
Reexamination Certificate
2006-01-17
2006-01-17
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
C257S204000, C257S206000, C257S207000, C438S128000, C438S129000
Reexamination Certificate
active
06987293
ABSTRACT:
First standard cells with no contact pattern and second standard cells having first contact patterns are placed on an area where a cell array is to be formed. Second contact patterns are additionally placed between the first standard cells. The second contact patterns are placed in an area that lacks a power supply capability.
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Sakamoto Shinsuke
Yamaguchi Akira
Jackson Jerome
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Ortiz Edgardo
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