Semiconductor integrated circuit device and process for...

Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal

Reexamination Certificate

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C438S630000, C438S651000, C438S683000, C438S755000

Reexamination Certificate

active

07375013

ABSTRACT:
Formation of an WNXfilm24constituting a barrier layer of a gate electrode7A having a polymetal structure is effected in an atmosphere containing a high concentration nitrogen gas, whereby release of N (nitrogen) from the WNXfilm24is suppressed in the heat treatment step after the formation of the gate electrode7A.

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