Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2008-05-20
2008-05-20
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C438S630000, C438S651000, C438S683000, C438S755000
Reexamination Certificate
active
11396000
ABSTRACT:
Formation of an WNXfilm24constituting a barrier layer of a gate electrode7A having a polymetal structure is effected in an atmosphere containing a high concentration nitrogen gas, whereby release of N (nitrogen) from the WNXfilm24is suppressed in the heat treatment step after the formation of the gate electrode7A.
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Kogayu Hiroshige
Tanabe Yoshikazu
Yamamoto Naoki
Yoshida Takehiko
Miles & Stockbridge P.C.
Renesas Technology Corp.
Toledo Fernando L.
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