Semiconductor integrated circuit device and method of production

Fishing – trapping – and vermin destroying

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Details

437 52, 437 59, 437 60, 357 236, 148DIG109, H01L 27108

Patent

active

051008220

ABSTRACT:
Disclosed is a semiconductor device having grooves extending from the semiconductor substrate surface into the interior of the substrate, the grooves having an insulating layer, such as an oxide layer, on the surfaces thereof, with the insulating layer being covered with a conductive layer. The corners of the grooves are rounded-off, whereby the electrostatic destruction voltage of the insulating film is increased as compared with using grooves without having rounded-off corners. Also disclosed is a method of making such device, including steps of forming an initial insulating film on the surfaces of the grooves and removing such initial insulating film to expose surfaces of the grooves, the grooves thereby being provided with rounded-off corners, and then sequentially forming an insulating layer and then a conductive layer on the surfaces of the grooves. Structure including the groove, with rounded-off corners, in the semiconductor substrate, the insulating layer on surfaces of the groove and the conductive layer on the insulating layer can be used as a vertically-formed data storage capacitance element, connected in series with a switching element, of a memory cell of a DRAM.

REFERENCES:
patent: 4353086 (1982-10-01), Jaccodine et al.

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