Semiconductor integrated circuit device and method of producing

Details Semiconductor integrated circuit device and method of producing Semiconductor integrated circuit device and method of producing

1985-12-09

1987-10-20

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

148 63, 156664, 437241, H01L 21285

Patent

active

047013494

ABSTRACT:
A silicide layer of a refractory metal for reducing resistance and a nitride layer for preventing diffusion of aluminum are formed on the source and drain regions of an MISFET. The silicide layer is formed in self-alignment with the source and drain regions by two annealings effected at a low temperature and at a high temperature, respectively, and has a low resistance. The nitride layer is formed by directly nitriding the silicide layer.

REFERENCES:
patent: 4429011 (1984-01-01), Kim
patent: 4545116 (1985-10-01), Lau

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