Semiconductor integrated circuit device and method of manufactur

Details Semiconductor integrated circuit device and method of manufactur Semiconductor integrated circuit device and method of manufactur

1989-10-17

1991-10-22

James, Andrew J.

357 40, 357 68, 357 41, 357 71, H01L 2710

Patent

active

050600451

ABSTRACT:
Disclosed is a semiconductor integrated circuit device adopting a gate array scheme, having a plurality of layers of wiring formed by a Design Automation system. The device according to the present invention includes a semiconductor substrate having basic cell forming regions, the basic cell forming regions being spaced from each other with wiring channel regions between adjacent basic cell forming regions. The wiring includes at least first-layer wiring lines arranged overlying the wiring channel regions; second-layer wiring lines overlying both the basic cell forming regions and the wiring channel regions; and third-layer wiring lines overlying both the basic cell forming regions and the wiring channel regions. The first-, second- and third-layer wiring lines respectively extend in first, second and third directions, the second direction being different from the first direction. The wiring pitches of the second-layer wiring lines and the third-layer wiring lines are set substantially equal to or smaller than the wiring pitch of th first-layer wiring lines. As a further aspect of the present invention, the ratio of wiring pitch of third-layer wiring lines to first-layer wiring lines can be 0.5, 1.0, 1.5 or 2.0. In addition, insulator films on which are formed the wiring lines are respectively subjected to flattening processes in order to flatten their upper surfaces, prior to providing the wiring lines thereon.

REFERENCES:
patent: 4883980 (1989-11-01), Morimoto et al.
patent: 4893170 (1990-01-01), Tokuda et al.
patent: 4910574 (1990-03-01), Aipperspach et al.
patent: 4924290 (1990-05-01), Enkaku et al.
patent: 4949149 (1990-08-01), Arraut et al.
patent: 4949162 (1990-08-01), Tamaki et al.
"VLSI Device Handbook", pp. 371-372, issued by Kabushiki Kaisha Science Forum on Nov. 28, 1983.

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