Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-11-30
2010-02-23
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S214000, C257S298000, C257S529000
Reexamination Certificate
active
07667218
ABSTRACT:
Disclosed herein is a phase change memory semiconductor integrated circuit device using a chalcogenide film that solves a problem that the operation temperature capable of ensuring long time memory retention is low due to low phase change temperature is and, at the same time, a problem that power consumption of the device is high since a large current requires to rewrite memory information due to low resistance. A portion of constituent elements for a chalcogenide comprises nitride, oxide or carbide which are formed to the boundary between the chalcogenide film and a metal plug as an underlying electrode and to the grain boundary of chalcogenide crystals thereby increasing the phase change temperature and high Joule heat can be generated even by a small current by increasing the resistance of the film.
REFERENCES:
patent: 4845533 (1989-07-01), Pryor et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5406509 (1995-04-01), Ovshinsky et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5933365 (1999-08-01), Klersy et al.
patent: 7115924 (2006-10-01), LaMaster et al.
patent: 7402851 (2008-07-01), Hideki et al.
patent: 2004/0251551 (2004-12-01), Hideki
patent: 2008/0144355 (2008-06-01), Boeve et al.
patent: 2002-203392 (2002-07-01), None
S. Lai et al., “OUM—A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications,” IEEE IEDM Tech. Dig., 2001, pp. 803-806.
Y. C. Chen et al., “180nm Sn-Doped Ge2Sb2Te5Chalcogenide Phase-change Memory Devices for Low Power, High Speed Embedded Memory for SOC Applications,” IEEE Custom Circuits Conference, 2003, pp. 395-398.
H. Horii et al., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM,” 2003 Symposium on VLSI Technology Digest of Technical Papers, T12B-5, pp. 177-178.
R. Kojima et al., “Nitrogen Doping Effect on Phase Change Optical Disks,” Jpn. J. Appl. Phys. vol. 37, Part 1, No. 4B, Apr. 1998, pp. 2098-2103.
T. H. Jeong et al., “Crystal Structure and Microstructure of Nitrogen-Doped Ge2Sb2Te5Thin Film,” Jpn. J. Appl. Phys. vol. 39, Part 1, No. 5A, May 2000, pp. 2775-2779.
A. Ebina et al., “Oxygen doping effect on Ge-Sb-Te phase change optical disks,” J. Vac. Sci. Technol. A 17(6), Nov./Dec. 1999, pp. 3463-3466.
Kurotsuchi Kenzo
Matsui Yuichi
Matsuzaki Nozomu
Takaura Norikatsu
Terao Motoyasu
Luu Chuong A.
Miles & Stockbridge P.C.
Renesas Technology Corp.
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