Semiconductor integrated circuit device and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S202000, C257S204000, C257S205000, C257S206000, C257S207000, C257S208000, C257S211000, C257S335000, C257S338000, C257S341000, C257S342000, C257S350000, C257S351000, C257S357000, C257S358000, C257S359000, C257S369000, C257S371000, C257S382000, C257S373000, C257S374000, C257S375000, C257S376000, C257S377000, C257S700000, C257S759000, C257S760000, C257S905000, C257S909000

Reexamination Certificate

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11043250

ABSTRACT:
A semiconductor integrated circuit device has a plurality of CMOS-type base cells arranged on a semiconductor substrate and m wiring layers, and gate array type logic cells are composed of the base cells and the wiring layers. Wiring within and between the logic cells is constituted by using only upper n (n<m) wiring layers. It becomes possible to shorten a development period and reduce a development cost when a gate array type semiconductor integrated circuit device becomes large in scale.

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