Semiconductor integrated circuit device and method of...

Details Semiconductor integrated circuit device and method of... Semiconductor integrated circuit device and method of...

2008-07-01

2008-07-01

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S202000, C257S204000, C257S205000, C257S206000, C257S207000, C257S208000, C257S211000, C257S335000, C257S338000, C257S341000, C257S342000, C257S350000, C257S351000, C257S357000, C257S358000, C257S359000, C257S369000, C257S371000, C257S382000, C257S373000, C257S374000, C257S375000, C257S376000, C257S377000, C257S700000, C257S759000, C257S760000, C257S905000, C257S909000

Reexamination Certificate

active

11043250

ABSTRACT:
A semiconductor integrated circuit device has a plurality of CMOS-type base cells arranged on a semiconductor substrate and m wiring layers, and gate array type logic cells are composed of the base cells and the wiring layers. Wiring within and between the logic cells is constituted by using only upper n (n<m) wiring layers. It becomes possible to shorten a development period and reduce a development cost when a gate array type semiconductor integrated circuit device becomes large in scale.

REFERENCES:
patent: 4851361 (1989-07-01), Schumann et al.
patent: 5171713 (1992-12-01), Matthews
patent: 5191405 (1993-03-01), Tomita et al.
patent: 5283449 (1994-02-01), Ooka
patent: 5311048 (1994-05-01), Takahashi et al.
patent: 5592009 (1997-01-01), Hidaka
patent: 5598029 (1997-01-01), Suzuki
patent: 5734187 (1998-03-01), Bohr et al.
patent: 5786638 (1998-07-01), Yamaha
patent: 5828119 (1998-10-01), Katsube
patent: 5917211 (1999-06-01), Murata et al.
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 6022797 (2000-02-01), Ogasawara et al.
patent: 6028360 (2000-02-01), Nakamura et al.
patent: 6031257 (2000-02-01), Noto et al.
patent: 6081305 (2000-06-01), Sato et al.
patent: 6133582 (2000-10-01), Osann et al.
patent: 6190957 (2001-02-01), Mochizuki et al.
patent: 6262487 (2001-07-01), Igarashi et al.
patent: 6265778 (2001-07-01), Tottori
patent: 6266110 (2001-07-01), Mizuno et al.
patent: 6288447 (2001-09-01), Amishiro et al.
patent: 6320234 (2001-11-01), Karasawa et al.
patent: 6326651 (2001-12-01), Manabe
patent: 6340632 (2002-01-01), Fukada et al.
patent: 6344692 (2002-02-01), Ikemasu et al.
patent: 6365954 (2002-04-01), Dasgupta
patent: 6462385 (2002-10-01), Kumagai
patent: 6476897 (2002-11-01), Watanabe et al.
patent: 6492735 (2002-12-01), Matsubara
patent: 6528835 (2003-03-01), Kaeriyama
patent: 6717267 (2004-04-01), Kunikiyo
patent: 6791147 (2004-09-01), Karasawa et al.
patent: 6858484 (2005-02-01), Nishihara et al.
patent: 6861756 (2005-03-01), Saito et al.
patent: 7064439 (2006-06-01), Berthold et al.
patent: 2001/0036737 (2001-11-01), Iguchi et al.
patent: 2001/0045651 (2001-11-01), Saito et al.
patent: 2001/0045655 (2001-11-01), Matsubara
patent: 2002/0053739 (2002-05-01), Honma et al.
patent: 2002/0195641 (2002-12-01), Fukuda et al.
patent: 2003/0148558 (2003-08-01), Kubo et al.
patent: 2003/0153187 (2003-08-01), Ohashi et al.
patent: 60-1844 (1985-01-01), None
patent: 5-21738 (1993-01-01), None
patent: 5-190816 (1993-07-01), None
patent: 9-62725 (1997-03-01), None
patent: 2000-172738 (2000-06-01), None
patent: 2000-269341 (2000-09-01), None
Form PTO-892 from corresponding parent case U.S. Appl. No. 09/972,117, mailed May 4, 2005 (1 page).
Notice of Allowance from corresponding parent case U.S. Appl. No. 09/972,117, mailed Sep. 20, 2006, (7 pages).

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