Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2007-02-13
2007-02-13
Parker, Kenneth (Department: 2815)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S123000, C438S118000, C438S617000, C257S666000, C257S673000, C257SE21641
Reexamination Certificate
active
10295908
ABSTRACT:
Arrangements are provided to effectively prevent wire disconnection generated due to an increase of heat applied to a semiconductor integrated circuit device The semiconductor integrated circuit device is structured such that a metal layer containing a Pd layer is provided in a portion to which a connecting member having a conductivity is connected, and an alloy layer having a melting point higher than that of an Sn—Pb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin. Further, a metal layer in which a thickness in a portion to which the connecting member having the conductivity is adhered is equal to or more than 10 μm is provided in the connecting member.
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Claims 1 and 2 filed Jul. 14, 2004 in a Divisional application of the above-identified application.
U.S. Office Action dated Jun. 27, 2006 (U.S. Appl. No. 11/362,732).
Kaneda Tsuyoshi
Miyaki Yoshinori
Suzuki Hiromichi
Antonelli, Terry Stout and Kraus, LLP.
Nguyen Joseph
Parker Kenneth
Renesas Technology Corp.
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