Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Reexamination Certificate
1999-09-07
2002-04-16
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
C438S131000, C257S529000
Reexamination Certificate
active
06372554
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates in general to semiconductor integrated circuit (IC) device manufacturing technologies; and, more particularly, the invention relates to a technique which is applicable for use in the manufacture of semiconductor IC chips with redundancy circuitry for correcting or “curing” defective bits through the use of fuse cutting processes.
Currently available semiconductor large-scale integrated circuit (LSI) memory devices, including, but not limited to, dynamic random access memory (DRAM) chips,are typically designed to offer redundant functions for correcting or curing bit defects that can take place in the manufacture thereof,thus increasing production yields.
One prior known approach to achieving such defect curing function is to pre-equip memory circuitry with redundant or “spare” rows and columns (redundancy circuit), one or several of which is/are selected for alternative use upon inputting of an address signal to a defective cell (malfunction bit) within a memory array to ensure that a memory chip will no longer exhibit operation failures as a whole even when the circuit partly contains defective portions therein.
Replacing or “switching” between a defective portion and its corresponding spare part is performed by cutting a fuse connected to an address switch/change circuit operatively associated therewith. Although electrical disconnection or cut-off of such fuse may be accomplished by presently available current blowout schemes or laser fusion methods in most cases, the latter is preferably employable for such purposes because of several which are advantages afforded thereby, including enhanced flexibility of replacement software programs along with an increased area efficiency. A prior art LSI memory device with built-in laser meltable fuse elements for use in replacing defective cells with redundant cells has been disclosed in patent publications such as, for example, Japanese Patent Laid-Open No. 25055/1990.
SUMMARY OF THE INVENTION
Built-in defect-curing fuse elements of the type referred to above are typically made of electrode lead materials, such as metals or polycrystalline silicon or other similar suitable conductive easy-to-melt materials, and are manufacturable on the principal surface of a silicon wafer simultaneously with the fabrication of semiconductor elements and/or associative electrical on-chip leads (at the wafer processing stage). In cases where a defective memory cell is found through probe test/inspection at the final stage of such wafer processes, a selected one of the fuse elements is blown out or cut away by irradiation using a laser beam, thereby allowing an address inherently corresponding to the defective cell to be allocated to a redundant cell.
The present inventor has studied the manufacturing processes of an LSI memory with redundant circuitry for use in curing defective bits by use of fuse cutoff techniques. A result of such study will be set forth below. Note that this should not be deemed as prior art, but is uniquely evaluated art, as will be summarized as follows.
As previously stated, memory cell defect curing is achieved by cutting or “breaking” for disconnection a selected fuse element in the address change/switch circuit at the final stage in the wafer processing procedure. In the case of employing such a laser blowout scheme, the cutting of a fuse is carried out by irradiating it with a laser beam from a light source placed over a wafer of interest. To this end, it a certain region of the principal surface of the wafer having more than one fuse formed therein should be formed such that part of an insulative film overlying the fuse is removed to form an opening to thereby permit the energy of such laser beam to readily reach the fuse.
Most wafers are formed such that a surface protection film, known as a “final passivation film” in the semiconductor art, is formed to overlie a metal lead pattern of the uppermost layer, which film in turn is covered by a heat-resistant resin layer made of polyimide that is deposited thereon. The passivation film is a protective film for use in preventing an unwanted mixture or “invasion” of a water component from wafer surfaces into on-chip electrical circuitry, which may typically be comprised of a dense dielectric film,such as a silicon oxide film or silicon nitride film fabricated by plasma chemical vapor deposition (CVD) techniques. Regarding the resin layer, this is formed by deposition for various intended purposes,including elimination of the so-called “soft errors” otherwise occurring due to alpha (&agr;) ray irradiation, elimination of chip surface damage due to residual silicon fillers in chip sealing resin (mold resin), and moderation or “relaxation” of stresses at the interface between the passivation film and the mold resin.
As the passivation film and resin layer referred to above are formed to relatively increased thicknesses in the order of micrometers (&mgr;m), those portions of the passivation film and resin layer which overlie the fuse must be removed prior to execution of probe test/inspection tasks. Alternatively, in case the fuse is formed of a conductive layer at a relatively lower layer, an interlayer dielectric film underlying the passivation film will also have to be removed away.
Removal of specified components of the passivation film and resin layer overlying the fuse may be attained by forming on or over the resin layer a first photoresist film provided with an opening or hole overlying the fuse, and by then letting the resin layer overlying the fuse undergo wet etching treatment with the photoresist film being used as a mask therefor. This photoresist film is also provided with an opening at a location that overlies a pad constituting an external connection terminal of the chip—the pad is made of part of the uppermost lead and thus is also called a “bonding pad”—thus allowing the resin layer overlying the pad to be subject to etching simultaneously.
Then, after having removed the first photoresist film, a second photoresist film having an opening overlying the fuse, is fabricated on the resist layer, which is used as a mask to apply dry etching to the passivation film overlying the fuse (and also its underlying interlayer dielectric film as the need arises), thereby forming a fuse-cut opening that overlies the fuse. This photoresist film is also provided with another opening overlying the pad to allow simultaneous etching of the passivation film overlying the pad, to thereby cause the pad to be exposed on the surface thereof.
Unfortunately the fuse/pad-hole fabrication processes referred to above have a problem concerning an increase in the number of wafer process steps, because of a need for two separate photolithography steps, one of which is for fabrication of the first photoresist film used in removing the resin layer, and the other of which is for formation of the second photoresist film used to remove the passivation film (and its underlying interlayer dielectric film where necessary). In this case the process technology is modifiable to continuously use, after completion of the wet etching of the resin layer using the first photoresist film, this first photoresist film for effecting a dry etching of the passivation film; however such approach—namely, using the same photoresist film for removal of the resin layer by dry etching and also for removal of the passivation film (and its underlying interlayer dielectric film if needed)—is not preferable because of the risks of a decrease in etching controllability.
One way of preventing such increase in the number of wafer process steps while retaining the etching controllability required is to let the above-noted resin layer be made of photosensitive resin materials. A fuse/pad-hole fabrication procedure in the case of employing a photosensitive resin involves first depositing a resin layer made, for example, of a photosensitive polyimide resin layer, on or over the passivation film; and then, openings or holes that overlie a fuse and a pad of interest are defined
Kajigaya Kazuhiko
Kawakita Keizo
Nakai Kiyoshi
Nakane Emi
Narui Seiji
Antonelli Terry Stout & Kraus LLP
Hitachi , Ltd.
Kennedy Jennifer M.
Nakane Emi
Niebling John F.
LandOfFree
Semiconductor integrated circuit device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2862282