Semiconductor integrated circuit device and method for...

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Reexamination Certificate

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C365S154000

Reexamination Certificate

active

11085579

ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor substrate and a ROM region, an SRAM region and a peripheral circuit region which are formed on the semiconductor substrate. Further, a column switch region is provided adjacent to the ROM region. MOS transistors in the ROM region and channel regions of access transistors in the SRAM region have substantially the same p-type impurity concentration. Accordingly, the threshold voltages of the transistors are adjusted by making use of the great dependence of the threshold voltage of the transistor on the channel width.

REFERENCES:
patent: 5343437 (1994-08-01), Johnson et al.
patent: 5668752 (1997-09-01), Hashimoto
patent: 6041008 (2000-03-01), Marr
patent: 6438024 (2002-08-01), Gold et al.
patent: 2001/0025997 (2001-10-01), Onishi
patent: 2003/0185085 (2003-10-01), Kaneko
patent: 2004/0004882 (2004-01-01), Liaw et al.
patent: 11-195976 (1999-07-01), None
patent: 2000-133701 (2000-05-01), None
patent: WO 2004015711 (2004-02-01), None

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