Semiconductor integrated circuit device and manufacturing...

Details Semiconductor integrated circuit device and manufacturing... Semiconductor integrated circuit device and manufacturing...

2005-01-18

2005-01-18

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S242000, C257S288000, C257S302000, C257S329000, C257S332000, C257S334000

Reexamination Certificate

active

06844578

ABSTRACT:
In a semiconductor integrated circuit device in which the number of the PMOS transistors to be used is relatively larger than that of the NMOS transistors and the PMOS transistor is used as an output driver, there is provided a semiconductor integrated circuit device having excellent stability, reliability, and performance while being inexpensive, and a manufacturing method thereof. In such a semiconductor integrated circuit device, complementary MOS circuits are composed of a P-type MOSFET (36) and an N-type MOSFET (37) which are a horizontal, an output driver is composed of a P-type vertical MOSFET (38) having a trench structure, and a conductivity type of the gate electrode of the respective MOSFETs is set as a P-type.

REFERENCES:
patent: 4890144 (1989-12-01), Teng et al.
patent: 5285093 (1994-02-01), Lage et al.
patent: 5554870 (1996-09-01), Fitch et al.
patent: 5698893 (1997-12-01), Perera et al.

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