Semiconductor integrated circuit device and fabrication method t

Details Semiconductor integrated circuit device and fabrication method t Semiconductor integrated circuit device and fabrication method t

1994-12-30

1997-04-01

Picardat, Kevin

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Insulative housing or support

22818022, 29840, 438126, H01L 2160

Patent

active

056165200

ABSTRACT:
A semiconductor device is fabricated by forming first metal balls on electrode pads of a semiconductor chip. The first metal balls each can have a sharp tipped anchor. All of the anchors simultaneously flattened slightly only to the extent of equalizing the height thereof. The first metal balls are bonded to electrodes formed on a substrate with wirings by embedding the anchors into the electrodes. Alternatively, second metal balls can be formed on the electrodes which are then flattened to equalize the height thereof. The first metal balls, either with or without the anchors, are bonded to the second metal balls. The first and second metal balls are preferably heated during the bonding step to soften the second metal balls.

REFERENCES:
patent: 4372037 (1983-02-01), Scapple et al.
patent: 4604644 (1986-08-01), Beckham et al.
patent: 4874721 (1989-10-01), Kimura et al.
patent: 4874722 (1989-10-01), Bednarz et al.
patent: 4957882 (1990-09-01), Shinomiya
patent: 5071787 (1991-12-01), Mori et al.
patent: 5126818 (1992-06-01), Takami et al.
patent: 5172851 (1992-12-01), Matsuhita et al.
patent: 5186381 (1993-02-01), Kim
patent: 5201451 (1993-04-01), Desai et al.
patent: 5219794 (1993-06-01), Satoh et al.
patent: 5249450 (1993-10-01), Wood et al.

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device and fabrication method t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device and fabrication method t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and fabrication method t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-538637