Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1984-07-30

1986-09-09

Larkins, William D.

357 239, 357 59, H01L 2978

Patent

active

046112375

ABSTRACT:
A MOS transistor integrated circuit device has at least one interconnection layer crossing the source and drain regions of a MOS transistor such that it overlies these source and drain regions. An electrical conductive layer is formed on the surface of at least one of the source and drain regions of the MOS transistor. The electrical conductive layer crosses the interconnection layer with an insulating layer therebetween such that it underlies the interconnection layer. The electrical conductive layer is separated from source and drain takeout electrodes and electrically insulated from the interconnection layer.

REFERENCES:
patent: 3964092 (1976-06-01), Wadham
patent: 4163246 (1979-07-01), Aomura et al.
patent: 4222062 (1980-09-01), Trotter et al.
patent: 4329706 (1982-05-01), Crowder et al.
Japanese Journal of Applied Physics, vol. 18, No. 3, Mar. 1979, Tokyo, Japan: M. Hirabayashi, pp. 581-587.

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