Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1990-05-23

1991-10-15

Prenty, Mark

357 59, 357 42, 357 233, 357 34, H01L 2702, H01L 2904, H01L 2910, H01L 2972

Patent

active

050578944

ABSTRACT:
Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.

REFERENCES:
patent: 3673471 (1972-06-01), Klein et al.
patent: 4450470 (1984-05-01), Shiba
patent: 4727046 (1988-02-01), Tuntasood et al.
patent: 4737472 (1988-04-01), Schaber et al.
patent: 4785341 (1988-11-01), Ning et al.
patent: 4808548 (1989-02-01), Thomas et al.
IEDM Technical Digest, Dec. 1985, pp. 423-426, Watanabe et al.
IEDM Technical Digest, Dec. 1985, pp. 34-37, Vora et al.

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