Semiconductor integrated circuit device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307300, 307443, 307270, 307458, 307457, H03K 1920, H03K 333, H03K 1716, H03K 301

Patent

active

047407190

ABSTRACT:
A semiconductor integrated circuit device including: a first transistor whose base receives an input signal, and whose collector is connected to a high power supply voltage; a second transistor whose base is conducted to the emitter of said first transistor and whose emitter is connected to a low power supply voltage; a third transistor whose base is connected to the collector of said first transistor, whose collector is connected to said high power supply voltage, and whose emitter is connected to the collector of said second transistor directly or via a load element; and a fourth transistor whose base is connected to the emitter of said third transistor, whose emitter is connected to said low power supply voltage, and from whose collector an output signal of said semiconductor integrated circuit device is taken out.

REFERENCES:
patent: 3557383 (1967-10-01), Wavre et al.
patent: 3792292 (1974-02-01), Priel
patent: 3867644 (1975-02-01), Cline
patent: 4234805 (1980-11-01), Carlsen, II
patent: 4255670 (1981-03-01), Griffith
patent: 4321490 (1982-03-01), Bechdolt
patent: 4591741 (1986-05-01), Cooper
Mitsubishi Semiconductors 1985 Bipolar Digital IC ALSTTL, Mitsubishi, Printed in Japan, Apr. 1985, pp. 2-15.

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