Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2009-02-24

2011-10-18

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S410000, C257S751000, C257S752000, C257S531000, C257S522000, C257SE23011

Reexamination Certificate

active

08039968

ABSTRACT:
A semiconductor integrated circuit device including a dummy via is disclosed. In the semiconductor integrated circuit device, problems such as reduction in the designability and increase in fabrication cost which result from the existence of a dummy wire connected to the dummy via are suppressed. The semiconductor integrated circuit device includes a substrate and three or more wiring layers formed on the substrate. The dummy via connects between a first wiring layer and a second wiring layer. The dummy wire connected to the dummy via exists in the second wiring layer. A protrusion amount of the dummy wire is smaller than a protrusion amount of an intermediate wire included in a stacked via structure.

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Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2009-032318, mailed Aug. 3, 2010.

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