Semiconductor integrated circuit device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level

Reexamination Certificate

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Details

C257S048000, C257S290000, C257S291000, C257S412000, C257S368000, C257S066000, C257S413000, C257S072000, C257SE21413, C257SE27111, C257SE27097, C257SE27112

Reexamination Certificate

active

07834377

ABSTRACT:
A finger length a1of a transistor P11is longer than a finger length A1of a transistor P1, and a finger length b1of a transistor N11is longer than a finger length B1of a transistor N1. The finger length b1of the transistor N11is shorter than the finger length A1of the transistor P1, and the relation: a1>A1>b1>B1is established. In a relation between an I/O section and a logic circuit section, as for MOS transistor of the same conductive type, a finger length of a MOS transistor constituting the logic circuit section is set so as to be longer than a finger length of a MOS transistor constituting the I/O section.

REFERENCES:
patent: 6255705 (2001-07-01), Zhang et al.
patent: 6385159 (2002-05-01), Hidaka et al.
patent: 6710371 (2004-03-01), Kitahara et al.
patent: 7068552 (2006-06-01), Kawasumi
patent: 2004/0251484 (2004-12-01), Miyazaki et al.
patent: 2005/0040461 (2005-02-01), Ono et al.
patent: 2006/0113533 (2006-06-01), Tamaki et al.
patent: 2000-243973 (2000-09-01), None
patent: 2000-349165 (2000-12-01), None

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