Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Reexamination Certificate
2007-04-10
2010-11-16
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
C257S048000, C257S290000, C257S291000, C257S412000, C257S368000, C257S066000, C257S413000, C257S072000, C257SE21413, C257SE27111, C257SE27097, C257SE27112
Reexamination Certificate
active
07834377
ABSTRACT:
A finger length a1of a transistor P11is longer than a finger length A1of a transistor P1, and a finger length b1of a transistor N11is longer than a finger length B1of a transistor N1. The finger length b1of the transistor N11is shorter than the finger length A1of the transistor P1, and the relation: a1>A1>b1>B1is established. In a relation between an I/O section and a logic circuit section, as for MOS transistor of the same conductive type, a finger length of a MOS transistor constituting the logic circuit section is set so as to be longer than a finger length of a MOS transistor constituting the I/O section.
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Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Renesas Electronics Corporation
Spalla David
Warren Matthew E
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