Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-12-10
2009-10-13
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S189050, C365S230060
Reexamination Certificate
active
07602651
ABSTRACT:
This disclosure concerns a device outputting data to the outside comprising a first transistor with a first conductive type which is connected between an output low voltage corresponding to a first logical value and the pad and which connects the output low voltage to the pad when the digital data has the first logical value; a second transistor with a second conductive type which is connected between an output high voltage corresponding to a second logical value and the pad and which connects the output high voltage to the pad when the digital data has the second logical value; and a third transistor with the first conductive type which is connected between the output high voltage and the pad so as to be parallel to the second transistor and which connects the output high voltage to the pad when the digital data has the second logical value.
REFERENCES:
patent: 5592419 (1997-01-01), Akaogi et al.
patent: 63-146511 (1988-06-01), None
patent: 5-102827 (1993-04-01), None
patent: 11-120784 (1999-04-01), None
Makino Eiichi
Ohshima Shigeo
Kabushiki Kaisha Toshiba
Lam David
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4127426