Semiconductor integrated circuit device

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S163000, C365S113000

Reexamination Certificate

active

07489552

ABSTRACT:
In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. When the gate voltage of a memory cell selection transistor QM is controlled to afford a low resistance state, the maximum amount of current applied to the phase change portion is limited by the application of a medium-state voltage to the control gate, thereby avoiding overheating of the phase change portion.

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