Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-08-09
2009-02-10
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S163000, C365S113000
Reexamination Certificate
active
07489552
ABSTRACT:
In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. When the gate voltage of a memory cell selection transistor QM is controlled to afford a low resistance state, the maximum amount of current applied to the phase change portion is limited by the application of a medium-state voltage to the control gate, thereby avoiding overheating of the phase change portion.
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Kurotsuchi Kenzo
Matsuoka Hideyuki
Takaura Norikatsu
Takemura Riichiro
Terao Motoyasu
Miles & Stockbridge P.C.
Nguyen Dang T
Renesas Technology Corp.
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