Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2005-09-30

2008-08-12

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S751000, C257S760000, C257S762000, C257S773000, C257S774000, C257SE21576, C257SE21577

Reexamination Certificate

active

07411301

ABSTRACT:
In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 μm and is smaller than about 1.44 μm, and the width of a second Cu wiring and the diameter of a plug are about 0.18 μm, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.

REFERENCES:
patent: 4536951 (1985-08-01), Rhodes et al.
patent: 5019877 (1991-05-01), Hosogi
patent: 5675187 (1997-10-01), Numata et al.
patent: 6373136 (2002-04-01), Otsuka et al.
patent: 2002/0100984 (2002-08-01), Oshima et al.
patent: 2003/0189224 (2003-10-01), Ohsaki et al.
patent: 2003/0218259 (2003-11-01), Chesire et al.
patent: 2004/0173906 (2004-09-01), Saito et al.
patent: 64-090544 (1989-04-01), None
patent: 03-145743 (1991-06-01), None
patent: 11-074355 (1999-03-01), None
patent: 2001-118922 (2001-04-01), None
patent: 2002-124565 (2001-04-01), None
patent: 2001-298084 (2001-10-01), None
E. T. Ogawa et al, “Stress-Induced Voiding Under Vias Connected to Wide Cu Metal Leads,” Texas Instruments Inc., IEEE 02CH37320, 40thAnnual International Reliability Physics Symposium, Dallas, 2002. pp. 312-321.

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