Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-09-20
2008-08-12
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185170
Reexamination Certificate
active
07411819
ABSTRACT:
A semiconductor integrated circuit device has a first memory cell group including a plurality of rewritable nonvolatile memory cells arranged on a semiconductor chip and a second memory cell group including a plurality of rewritable nonvolatile memory cells arranged on the semiconductor chip. Setting of the write threshold voltage of the memory cell of the first memory cell group and setting of the write threshold voltage of the memory cell of the second memory cell group are variable.
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Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Michael T
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