Semiconductor integrated circuit device

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185170

Reexamination Certificate

active

07411819

ABSTRACT:
A semiconductor integrated circuit device has a first memory cell group including a plurality of rewritable nonvolatile memory cells arranged on a semiconductor chip and a second memory cell group including a plurality of rewritable nonvolatile memory cells arranged on the semiconductor chip. Setting of the write threshold voltage of the memory cell of the first memory cell group and setting of the write threshold voltage of the memory cell of the second memory cell group are variable.

REFERENCES:
patent: 6373746 (2002-04-01), Takeuchi et al.
patent: 6490219 (2002-12-01), Yoneya et al.
patent: 6862213 (2005-03-01), Hamaguchi
patent: 7057922 (2006-06-01), Fukumoto
patent: 2002/0114207 (2002-08-01), Takeuchi et al.
patent: 2004/0114429 (2004-06-01), Ehiro et al.
patent: 2004/0130938 (2004-07-01), Hamaguchi
patent: 2004/0193864 (2004-09-01), Tsai et al.
patent: 2004/0218420 (2004-11-01), Aakjer
patent: 2004/0264244 (2004-12-01), Morimoto
patent: 2005/0122768 (2005-06-01), Fukumoto
patent: 2005/0207220 (2005-09-01), Takeuchi

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