Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2006-06-13

2008-07-15

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23143

Reexamination Certificate

active

07400044

ABSTRACT:
To improve a degree of integration and reliability of a semiconductor integrated circuit device. There are included third wire14arranged in the same layer as first wire11and second wire12and arranged in a direction intersecting with the first wire11and the second wire12, first gate material wire18arranged between the first wire11and first well5in the vicinity of an intersecting point between wiring directions of the first wire11and the third wire14and electrically connected to the third wire14through via holes, and first diffusion layer6arranged in second well4in the vicinity of an intersecting point between wiring directions of the second wire12and the third wire14. The first diffusion layer6is electrically connected to the third wire14through via holes and each includes impurities having a concentration higher than each of the second wells4. The first gate material wire18and the first diffusion layer6are used as a wire path for substrate back-bias control associated with the third wire14.

REFERENCES:
patent: 2006/0292806 (2006-12-01), Nakamoto
patent: 61-196617 (1986-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3965460